Silicon Nanowire Growth (Si)

  • High temperature ramp rate allows anneal and different process steps to run at different temperatures within a reasonable time frame
  • Plasma enables the catalyst thin film to form islands which would not form without at that temperature
  • Plasma provides higher activation of catalyst leading to greater growth rate and denser nanostructures due to more catalyst sites being active
  • Plasma enables etching native oxide in situ to encourage epitaxial growth
  • NWs can be grown with or without plasma


Temperature range: お問い合わせください
Vertical growth rate: お問い合わせください