Platinum (Pt) Etching

Pt may be dry etched using the following process types:

Platinum (Pt) ICP Etching

Platinum (Pt) ICP Etching

Pt may be dry etched using the Inductively Coupled Plasma (ICP) following process technique

  PlasmaPro100 ICP180 PlasmaPro100 ICP380
Etch rate: お問い合わせ下さい お問い合わせ下さい
Uniformity: お問い合わせ下さい お問い合わせ下さい
Selectivity to PR: お問い合わせ下さい お問い合わせ下さい
Wafer size: お問い合わせ下さい お問い合わせ下さい


latinum (Pt) Ion Beam Etching

Platinum (Pt) Ion Beam Etching (IBE)

Pt may be etched using the Ion Beam Etching process.



SEM image shows 2mm deep Pt etch (PR still in place)



Summary performance data:

Chamber base pressurea < 3e-7 Torr
Load lock base pressureb < 2E-5 Torr

a. After 12 hours bake out at 80˚C
b. Load lock pumps down to 6E-5Torr in less than three minutes. It takes less than five minutes from  sample loading i.e. from the load lock to process platen with load lock pump down sequence.

Process specification

1. Pt etch with rotation and adjustable tilt.

  Ionfab300Plus (LC)
Typical etch rate: お問い合わせ下さい
Uniformity:3 お問い合わせ下さい
Selectivity to mask:  お問い合わせ下さい
Wafer size: お問い合わせ下さい