Nickel (Ni) Etching

Ni may be dry etched using the following process types:

Nickel (Ni) ICP Etching

Nickel (Ni) ICP Etching

Ni may be dry etched using the Inductively Coupled Plasma (ICP) process technique.

SEM image shows redeposition-free ICP Nickel Etch, 0.5µm deep, PR removed


Process Specification

  PlasmaPro100 ICP65 PlasmaPro100 ICP180 PlasmaPro100 ICP380
Etch rate: お問い合わせ下さい お問い合わせ下さい お問い合わせ下さい
Uniformity: お問い合わせ下さい お問い合わせ下さい お問い合わせ下さい
Selectivity to PR: お問い合わせ下さい お問い合わせ下さい お問い合わせ下さい
Wafer size: お問い合わせ下さい お問い合わせ下さい お問い合わせ下さい


Nickle (Ni) Ion Beam Etching

Nickel (Ni) Ion Beam Etching (IBE) in the Ionfab300Plus (LC)

Ni may be etched using the Ion Beam Etch process.



SEM image shows 0.3µm deep Ni etch, PR mask not removed



Summary performance data:

Chamber base pressurea <3e-7 Torr
Load lock base pressureb <2E-5 Torr

a. After 12 hours bake out at 80˚C
b. Load lock pumps down to 6E-5Torr in less than three minutes. It takes less than five minutes from  sample loading i.e. from the load lock to process platen with load lock pump down sequence.

Process specification

1. Ni etch with rotation and adjustable tilt.

Typical etch rate [nm/min]:    お問い合わせ下さい
Uniformity3: お問い合わせ下さい
Reproducibility: お問い合わせ下さい
Selectivity to mask: お問い合わせ下さい