Gold (Au) Ion Beam Etching (IBE)

Au may be etched using our Ion Beam Etch process.

SEM image shows 4.5 um deep etch with 50 deg wall angle (photo resist mask still in place)





Summary performance data:

Chamber base pressurea <3e-7 Torr
Load lock base pressureb <1e-5 Torr

a. After 12 hours bake out at 80˚C.
b. Load lock pumps down to 6E-5Torr in less than three minutes. It takes less than five minutes from sample loading i.e. from the load lock to process platen with load lock pump down sequence.

Process Specification

  Ionfab300Plus (LC)
Typical etch rate: お問い合わせ下さい
Uniformity3: お問い合わせ下さい
Selectivity to PR: お問い合わせ下さい
Wafer size: お問い合わせ下さい


  1. Some variation in etch rate, selectivity and profile may be observed between wide features and narrow features.
  2. Minimum mask thickness required is (1.2 x Etch depth)/Selectivity.
  3. With 5mm edge exclusion