Aluminium Oxide (Al2O3) Ion Beam Etch (IBE)

Al2O3 may be etched using the Reactive Ion Beam Etch (RIBE) process technique.

Process features

  • Process gases: Ar, CHF3, O2
  • Al2O3 etch with rotation and adjustable tilt





Summary performance data

Chamber base pressurea <3e-7 Torr
Load lock base pressureb   <1e-5 Torr

a. After 12 hours bake out at 80°C
b. Load lock pumps down to 6E-5Torr in less than three minutes. It takes less than five minutes from sample loading i.e. from the load lock to process platen with load lock pump down sequence.

Process specification

  Ionfab300Plus (LC)
Typical etch rate [nm/min]: お問い合わせ下さい
Uniformity3: お問い合わせ下さい
Selectivity to PR: お問い合わせ下さい
Wafer size: お問い合わせ下さい