Indium Phosphide (InP) Reactive Ion Beam Etch (RIBE)

InP may be etched using Reactive Ion Beam Etch (RIBE)

Process Features

  • Chlorine and CH4/H2 based process
  • CAIBE or RIBE possible with RF sources

SEM image shows Anisotropic InP RIBE

Summary performance data:

Chamber base pressurea <3e-7 Torr
Load lock base pressureb <1e-5 Torr

a. After 12 hours bake out at 80˚C.
b. Load lock pumps down to 6E-5Torr in less than three minutes. It takes less than five minutes from sample loading i.e. from the load lock to process platen with load lock pump down sequence.

Process Specification

  Ionfab 300Plus (LC)
Typical etch rate: お問い合わせ下さい
Uniformity [±%]3: お問い合わせ下さい
Selectivity to SiO2: お問い合わせ下さい
Wafer size: お問い合わせ下さい