Silicon Germanium (SiGe) Deposition
PECVD polycrystalline SiGe by multilayer process (100 nm amorphous PECVD SiGe seed layer to avoid the long incubation time on SiO2/ CVD SiGe crystallisation seed layer for subsequent low emperature polycrystalline PECVD SiGe growth).
SEM image shows 10 µm thick SiGe showing excellent contact hole filling