Vanadium Oxide (VO) Ion Beam Deposition

VOx may be deposited using Ion Beam Deposition (IBD).

Process features

  • The deposition rate used will depend on electrical properties requirements of the deposited films
  • For the highest quality a lower rate is usually used



Process Specification:

  Ionfab300Plus (LC)
Deposition rate: お問い合わせください
Deposition uniformity: お問い合わせください
Resistivity: お問い合わせください
Resistance uniformity: お問い合わせください
Stress (compressive)2: お問い合わせください
Wafer size: お問い合わせください