Hafnium Dioxide (HfO2) Deposition

HfO2 may be deposited using the following process types:

Hafnium Oxide (HfO2) Reactive Ion Beam Deposition (RIBD) 

Hafnium Oxide (HfO2) Reactive Ion Beam Deposition (RIBD)

Process features:

  • Etch source available for pre-clean
  • Deposition Gases: Ar, O2









Summary performance data:

Chamber base pressurea お問い合わせください
Load lock base pressureb お問い合わせください


Process specification

1. HfO2 deposition with rotation and adjustable tilt

Hafnium Dioxide (HfO2) Atomic Layer Deposition (ALD) 

Hafnium Dioxide (HfO2) ALD

HfO2 may be deposited using Atomic Layer Deposition  (ALD).

Process Specification

Precursors: お問い合わせください
Non-metal precursors: お問い合わせください
Temperature range: お問い合わせください
Growth rate per cycle: お問い合わせください
Deposition rate: お問い合わせください
Refractive Index: お問い合わせください
Uniformity: お問い合わせください