Aluminium Oxide (Al2O3) plasma and thermal ALD

Al2O3 has applications in medium-k dielectric, wear resistant coating and barrier layers and may be deposited using Atomic Layer Deposition  (ALD). Process benefits include; true self-limiting ALD behaviour, high repeatability and high conformality.

SEM image shows 80 nm thick Al2O3 film in 2.5μm wide trenches with an aspect ratio of 10:1. Courtesy of Eindhoven University of Technology and Philips Research

Process Specification

Precursors: お問い合わせ下さい
Non-metal precursors: お問い合わせ下さい
Temperature range: お問い合わせ下さい
Growth rate per cycle: お問い合わせ下さい
Deposition rate: お問い合わせ下さい
Refractive Index: お問い合わせ下さい
Uniformity: お問い合わせ下さい