Al2O3 Ion Beam Deposition in the Ionfab300Plus (LC) and Optofab3000

Process Specification:

  • Al2O3 deposition with rotation and adjustable tilt
  • Etch source available for pre-clean
  • Deposition Gases: Ar, O2

Summary performance data:

Chamber base pressurea <3e-7 Torr
Load lock base pressureb <1e-5 Torr

a. After 12 hours bake out at 80˚C.
b. Load lock pumps down to 6E-5Torr in less than three minutes. It takes less than five minutes from sample loading i.e. from the load lock to process platen with load lock pump down sequence.

Ionfab300Plus (LC)

Deposition rate: お問い合わせ下さい
Uniformity over 200mm:1, 2 お問い合わせ下さい
Reproducibility: お問い合わせ下さい
Stress (compressive):2 お問い合わせ下さい
Wafer size: お問い合わせ下さい


Deposition rate: お問い合わせ下さい
Refractive Index @ 632.8nm: お問い合わせ下さい
Uniformity over 75mm thick annulus: お問い合わせ下さい
Uniformity over 30mm thick annulus centred at 75mm substrate radius: お問い合わせ下さい
Uniformity over 200mm (no shield):1,2 お問い合わせ下さい
Stress (compressive):2 お問い合わせ下さい
Wafer size: お問い合わせ下さい