Silicon Nanowire Growth (Si)

  • High temperature ramp rate allows anneal and different process steps to run at different temperatures within a reasonable time frame
  • Plasma enables the catalyst thin film to form islands which would not form without at that temperature
  • Plasma provides higher activation of catalyst leading to greater growth rate and denser nanostructures due to more catalyst sites being active
  • Plasma enables etching native oxide in situ to encourage epitaxial growth
  • NWs can be grown with or without plasma

Technology:


Temperature range: お問い合わせください
Vertical growth rate: お問い合わせください

オックスフォードは、EDS分析システム「AZtecEnergy」、「INCAEnergy」、WDS分析システム「INCAWave」、EBSD分析システム「AZtecHKL」の計4種類の装置講習会を下記の内容にて開催いたします。2日… https://t.co/B6SWcPMELw
10:46 午後 - 26 3 18
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