Polyimide (PI) ICP Etching

PI may be dry etched using Inductively Coupled Plasma (ICP) etch. The process is very clean and will only require very occasional plasma cleaning.

SEM image shows vertical 7µm deep polyimide structures etched by ICP using a metal mask.

  PlasmaPro 100 ICP180 PlasmaPro 100 ICP380
Etch rate: >1µm/min >1µm/min
Uniformity:    < ± 5% (7mm edge excl) < ± 5% (7mm edge excl)
Selectivity to Al, Cr, Ti: > 30:1 > 30:1
Selectivity to silylated PR: > 15:1 > 15:1
Wafer Size:   Up to 100mm Up to 200m

 

Polyimide (PI) ICP Etching for Failure Analysis

Polyimide (PI) ICP Etching for Failure Analysis

PI has applications can be used for Failure Analysis. It has excellent process repeatability and clean removal of a wide range of materials is possible, without lifting of metal tracks.

  PlasmaPro System133 ICP380
Etch rate: お問い合わせください
Uniformity: お問い合わせください
Selectivity to SiNx: お問い合わせください
Wafer size: お問い合わせください