Gold (Au) Etching

The Cl2, Ar, Oat high temperature satisfies the need to form volatile etch by smooth, clean etch results. Au may be dry etched using the following process types:

SEM image shows Ti/Au/Ti stack cleared down to SiO2 substrate. SiO2 mask intact. Clean substrate

Gold (Au) ICP Etching

Hot Chemical Gold (Au) ICP Etching

Au may be dry etched using the Inductively Coupled Plasma (ICP) process technique.

SEM image shows Ti/Au/Ti stack cleared down to SiO2 substrate. SiO2 mask intact. Clean substrate

  PlasmaPro100 ICP180 PlasmaPro100 ICP380
Etch rate: お問い合わせ下さい お問い合わせ下さい
Uniformity: お問い合わせ下さい お問い合わせ下さい
Selectivity to SiO2: お問い合わせ下さい お問い合わせ下さい
Selectivity to Ti: お問い合わせ下さい お問い合わせ下さい
Wafer size: お問い合わせ下さい お問い合わせ下さい

 

Gold (Au) Ion Beam Etching

Gold (Au) Ion Beam Etching (IBE)

Au may be etched using our Ion Beam Etch process.

SEM image shows 4.5 um deep etch with 50 deg wall angle (photo resist mask still in place)

 

 

 

 

Summary performance data:

Chamber base pressurea <3e-7 Torr
Load lock base pressureb <1e-5 Torr

a. After 12 hours bake out at 80˚C.
b. Load lock pumps down to 6E-5Torr in less than three minutes. It takes less than five minutes from sample loading i.e. from the load lock to process platen with load lock pump down sequence.

Process Specification

  Ionfab300Plus (LC)
Typical etch rate: お問い合わせ下さい
Uniformity3: お問い合わせ下さい
Selectivity to PR: お問い合わせ下さい
Wafer size: お問い合わせ下さい

Notes:  

  1. Some variation in etch rate, selectivity and profile may be observed between wide features and narrow features.
  2. Minimum mask thickness required is (1.2 x Etch depth)/Selectivity.
  3. With 5mm edge exclusion