Copper (Cu) Ion Beam Etching (IBE)

Copper (Cu) may be dry etched using Ion Beam Etching (IBE).

SEM image shows residue free Copper etch

 

 

 

Summary performance data:

Chamber base pressure <3e-7 Torr
Load lock base pressureb <1e-5 Torr

a. After 12 hours bake out at 80˚C.
b. Load lock pumps down to 6E-5Torr in less than three minutes. It takes less than five minutes from sample loading i.e. from the load lock to process platen with load lock pump down sequenc
e.

Process Specification

  Ionfab 300Plus
Typical etch rate [nm/min]:  お問い合わせ下さい
Uniformity3:   お問い合わせ下さい
Selectivity to PR: お問い合わせ下さい
Wafer size: お問い合わせ下さい