Tantalum Pentoxide (Ta2O5) ICP Etching

Ta2O5 may be dry etched using the Inductively Coupled Plasma (ICP) process technique. Process features include; fluorinated gas based processes and RIE-biased and temperature-controlled wafer electrode.

SEM image shows photonic crystal holes etched in Ta2O5 using ZEP520 mask
 

Process Specification

  PlasmaPro 100 ICP180 PlasmaPro100 ICP380
Etch rate: お問い合わせ下さい お問い合わせ下さい
Uniformity: お問い合わせ下さい お問い合わせ下さい
Selectivity to PR: お問い合わせ下さい お問い合わせ下さい
Selectivity to Cr: お問い合わせ下さい お問い合わせ下さい
Wafer size: お問い合わせ下さい お問い合わせ下さい