Aluminium Oxide (Al2O3) Etching

Al2O3 may be dry etched using the following process types:

Aluminium Oxide (Al2O3) ICP Etching

Aluminium Oxide (Al2O3) ICP Etching

Al2Oand related films may be dry etched using the Inductively Coupled Plasma (ICP) process technique.

SEM image shows 80° Wall etching in sapphire

 

Process Specification

  PlasmaPro100 ICP180 PlasmaPro100 ICP380 PlasmaPro133 ICP380
Etch rate: お問い合わせ下さい お問い合わせ下さい お問い合わせ下さい
Uniformity: お問い合わせ下さい お問い合わせ下さい お問い合わせ下さい
Selectivity to Ni: お問い合わせ下さい お問い合わせ下さい お問い合わせ下さい
Wafer size: お問い合わせ下さい お問い合わせ下さい お問い合わせ下さい
Batch sizes: - - お問い合わせ下さい

 

Aluminium Oxide (Al2O3) Ion Beam Etching (IBE)

Aluminium Oxide (Al2O3) Ion Beam Etch (IBE)

Al2O3 may be etched using the Reactive Ion Beam Etch (RIBE) process technique.

Process features

  • Process gases: Ar, CHF3, O2
  • Al2O3 etch with rotation and adjustable tilt

 

 

 

 

Summary performance data

Chamber base pressurea <3e-7 Torr
Load lock base pressureb   <1e-5 Torr

a. After 12 hours bake out at 80°C
b. Load lock pumps down to 6E-5Torr in less than three minutes. It takes less than five minutes from sample loading i.e. from the load lock to process platen with load lock pump down sequence.

Process specification

  Ionfab300Plus (LC)
Typical etch rate [nm/min]: お問い合わせ下さい
Uniformity3: お問い合わせ下さい
Selectivity to PR: お問い合わせ下さい
Wafer size: お問い合わせ下さい

 

 

Patterned Sapphire Etch for HBLED

Sapphire etching in the PlasmaPro System133 ICP380 with Active Spacer

 

  PlasmaPro System133 ICP380
Mask: お問い合わせ下さい お問い合わせ下さい
Etch rate: お問い合わせ下さい お問い合わせ下さい
Uniformity: お問い合わせ下さい お問い合わせ下さい
Selectivity to mask: お問い合わせ下さい お問い合わせ下さい
Wafer size: お問い合わせ下さい お問い合わせ下さい
Batch size: お問い合わせ下さい お問い合わせ下さい