Indium Phosphide/Indium Gallium Arsenide/Indium Aluminium Arsenide (InP/InGaAs/InAlAs) Etch

InP/InGaAs/InAlAs may be dry etched using the following process types:

Indium Phosphide (InP) Reactive Ion Etching (RIE)

Indium Phosphide (InP) Reactive Ion Etch (RIE)

InP may be dry etched using the Reactive Ion Etching (RIE) process technique


SEM image shows 3x3” batch InP wafer etched using ICP CH4/H2 process with Photo resist mask

 

 

Process Specification

 

  PlasmaPro NGP80 RIE PlasmaPro 100 RIE PlasmaPro System133 RIE
Etch Rate: お問い合わせ下さい お問い合わせ下さい お問い合わせ下さい
Single wafer size: お問い合わせ下さい お問い合わせ下さい お問い合わせ下さい
Batch size: お問い合わせ下さい お問い合わせ下さい お問い合わせ下さい
Selectivity to PR: お問い合わせ下さい お問い合わせ下さい お問い合わせ下さい
Uniformity: お問い合わせ下さい お問い合わせ下さい お問い合わせ下さい
 

 

Indium Phosphide (InP) ICP Etch

Indium Phosphide (InP) based materials using ICP Etch

InP may be dry etched using the Inductively Coupled Plasma (ICP) process technique



SEM image shows 3x3” batch InP wafer etched using ICP CH4/H2 process with Photo resist mask

 

 

Process Specification

  PlasmaPro 100 ICP180 PlasmaPro 100 ICP380 PlasmaPro System133 ICP380
Etch Rate: お問い合わせ下さい お問い合わせ下さい お問い合わせ下さい
Single wafer size: お問い合わせ下さい お問い合わせ下さい お問い合わせ下さい
Batch size: お問い合わせ下さい お問い合わせ下さい お問い合わせ下さい
Selectivity to SiO2 or SiN: お問い合わせ下さい お問い合わせ下さい お問い合わせ下さい
Uniformity: お問い合わせ下さい お問い合わせ下さい お問い合わせ下さい

 

Indium Phosphide (InP) Reactive Ion Beam Etch (RIBE)

Indium Phosphide (InP) Reactive Ion Beam Etch (RIBE)

InP may be etched using Reactive Ion Beam Etch (RIBE)

Process Features

  • Chlorine and CH4/H2 based process
  • CAIBE or RIBE possible with RF sources

SEM image shows Anisotropic InP RIBE

Summary performance data:

Chamber base pressurea <3e-7 Torr
Load lock base pressureb <1e-5 Torr

a. After 12 hours bake out at 80˚C.
b. Load lock pumps down to 6E-5Torr in less than three minutes. It takes less than five minutes from sample loading i.e. from the load lock to process platen with load lock pump down sequence.

Process Specification

  Ionfab 300Plus (LC)
Typical etch rate: お問い合わせ下さい
Uniformity [±%]3: お問い合わせ下さい
Selectivity to SiO2: お問い合わせ下さい
Wafer size: お問い合わせ下さい