Gallium Arsenide/Aluminium Gallium Arsenide (GaAs/AlGaAs) Reactive Ion Etching

 

GaAs/AlGaAs may be etched using the Reactive Ion Etching (RIE) process.

SEM image shows GaAs-AlGaAs VCSEL structure etched by RIE. Resist mask is still in place

 

  PlasmaPro 100 RIE
Etch rate: お問い合わせ下さい
Single wafer size: お問い合わせ下さい
Batch size: お問い合わせ下さい
Selectivity to PR: お問い合わせ下さい
Selectivity to SiO2 or SiN: お問い合わせ下さい
Uniformity: お問い合わせ下さい