Gallium Arsenide/Aluminium Gallium Arsenide Etching (GaAs/AlGaAs) ICP Etching
GaAs/AlGaAs may be etched using the Inductively Coupled Plasma (ICP) Etching process.
SEM image shows typical GaAs/AlGaAs VCSEL structure
Process Specification
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ICP Selective (PlasmaPro 100 ICP180) |
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Etch rate: |
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Single wafer size: |
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Selectivity to AlGaAs: |
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Selectivity to PR: |
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Uniformity*: |
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*7mm excl zone