Gallium Arsenide (GaAs) Reactive Ion Beam Etching (RIBE)

GaAs may be etched using the Reactive Ion Beam Etch (RIBE) process technique.

Process Features:

  • Process gases: Ar, Cl2
  • GaAs etch with rotation and adjustable tilt

 

 

 

SEM image shows 2mm deep GaAs slanted etch (PR still in place)

Summary performance data:

Chamber base pressurea <3e-7 Torr
Load lock base pressureb <1e-5 Torr

a. After 12 hours bake out at 80˚C.
b. Load lock pumps down to 6E-5Torr in less than three minutes. It takes less than five minutes from sample loading i.e. from the load lock to process platen with load lock pump down sequence.

Process Specification

  Ionfab300Plus (LC)
Typical etch rate: お問い合わせ下さい
Uniformity:3 お問い合わせ下さい
Selectivity to SiO2: お問い合わせ下さい
Wafer size: お問い合わせ下さい

Notes:  

  1. Some variation in etch rate, selectivity and profile may be observed between wide features and narrow features
  2. Minimum mask thickness required is (1.2 x Etch depth)/Selectivity
  3. With 5mm edge exclusion