Silicon Germanium (SiGe) Deposition

PECVD polycrystalline SiGe by multilayer process  (100 nm amorphous PECVD SiGe seed layer to avoid the long incubation time on SiO2/ CVD SiGe crystallisation seed layer for subsequent low emperature polycrystalline PECVD SiGe growth).

SEM image shows 10 µm thick SiGe showing excellent contact hole filling