Tantalum Nitride (TaN) Atomic Layer Deposition (ALD)

TaN may be deposited using Atomic Layer Deposition  (ALD).

Process Specification

Precursors: TBTMET - t-butylimido tris (dimethylamido) Tantalum - liquid bubbled @ 50°C
Non-metal precursors: N2/H2  plasma
Temperature range: 350ºC
Growth rate per cycle: 0.42 Å/cycle @ 350°C
Deposition rate: 0.25nm/min @ 350°C for insulating phase
Refractive Index: 1.90 @ 350°C
Uniformity: ± 1.5% over 100, ± 2.5% over 150mm, ± 3.5% over 200mm (FlexAL)