Silicon Dioxide (SiO2) Ion Beam Deposition (IBD)

SiO2 may be deposited using Ion Beam Deposition (IBD).

Process Features:

  • Process gases: Ar, O2
  • Etch source available for pre-clean

 

 

 

Summary performance data:

Chamber base pressurea <3e-7 Torr
Load lock base pressureb <1e-5 Torr

a. After 12 hours bake out at 80˚C.
b. Load lock pumps down to 6E-5Torr in less than three minutes. It takes less than five minutes from sample loading i.e. from the load lock to process platen with load lock pump down sequence.

  Ionfab300Plus (LC) Optofab3000
Deposition rate: お問い合わせ下さい お問い合わせ下さい
Uniformity over 200mm:1, 2 お問い合わせ下さい お問い合わせ下さい
Stress (compressive):2 お問い合わせ下さい お問い合わせ下さい
Wafer size: お問い合わせ下さい お問い合わせ下さい