Silicon Nitride (Si3N4) Reactive Ion Beam Deposition (RIBD) in the Ionfab300Plus or Ionfab300Plus (LC)

Process Features:

  • Etch source available for pre-clean
  • Deposition Gases: Ar, N2

Summary performance data:

Chamber base pressurea <3e-7 Torr
Load lock base pressureb <1e-5 Torr

a. After 12 hours bake out at 80˚C.
b. Load lock pumps down to 6E-5Torr in less than three minutes. It takes less than five minutes from sample loading i.e. from the load lock to process platen with load lock pump down sequence.

Process Specification

Deposition rate1: お問い合わせ下さい
Uniformity over 200mm:2, 3 お問い合わせ下さい
Stress (compressive):3 お問い合わせ下さい
Wafer size: お問い合わせ下さい